Differential Work-Function Enabled Bifunctional Switching in Strontium Titanate Flexible Resistive Memories
نویسندگان
چکیده
منابع مشابه
Orientation-dependent work function of in situ annealed strontium titanate.
We have used energy-filtered x-ray photoelectron emission microscopy (XPEEM) and synchrotron radiation to measure the grain orientation dependence of the work function of a sintered niobium-doped strontium titanate ceramic. A significant spread in work function values is found. Grain orientation and surface reducing/oxidizing conditions are the main factors in determining the work function. Ene...
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Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-based RRAM to probe the switching behavior. The bipolar resistive switching behavior of the set and ...
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Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical...
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We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltag...
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Metal oxide based resistive switching memories, also known as resistive-RAM (RRAM), have shown promising characteristics for next-generation nonvolatile memory and reconfigurable logic applications. These devices can be electrically switched between a low-resistance-state (LRS) and high-resistance-state (HRS) over many cycles. Fig. 1(a) illustrates the resistive switching terminologies and the ...
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ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2020
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.9b20585