Diffusivity variation in Electromigration failure

Diffusivity variation in Electromigration failure

Electromigration driven void dynamics plays an important role in the reliability of copper interconnects; a proper understanding of which is made more difficult due to local variations in line microstructure. In simulations, the parameter which best incorporates these variations is the effective atomic diffusivity D eff which is sensitive to grain size and orientation, interface layer thickness...

Damage mechanics of electromigration induced failure

Electromigration is a major road block in the pursuit of nanoelectronics and next generation power electronics. The current density in the state-of-the-art microelectronics solder joints is about 10 A/cm. In the next generation nanoelectronics solder joints this current density is expected to increase by an order of magnitude, at least. In this paper, a new damage mechanics formulation is imple...

Electromigration and Stressmigration Failure Mechanism Studies in Copper Interconnects

Electromigration (EM) and stressmigration (SM) are serious wear-out mechanisms, limiting the lifetime of ULSI copper interconnect systems. This paper will summarize comprehensive EM and SM studies with respect to the failure modes, kinetics and lifetime projection. It will be shown, that microstructural as well as layout-specific features play a key role for both mechanisms. Bimodal EM failure ...

Modeling the electromigration failure time distribution in short copper interconnects

Electromigration lifetimes and void growth at low cumulative failure probability

We studied electromigration (EM) lifetimes and void growth at low cumulative failure probability. We carried out EM test in damascene Cu lines using sudden-death type test structures. Its cumulative failure probability ranges from 0.005 to 90%. To investigate the void growth behaviour, Cu microstructures was investigated. EM lifetime shows correlation with the void nucleation site and the void ...