Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

نویسندگان

چکیده

The growth of large-area diamond films with low dislocation density is a landmark in the fabrication diamond-based power electronic devices or high-energy particle detectors. Here, we report development strategy based on use micrometric laser-pierced hole arrays to reduce densities heteroepitaxial chemical vapor deposition diamond. We show that, under optimal conditions, this leads reduction by two orders magnitude reach an average value 6 × 105 cm?2 region where lateral occurred, which equivalent that typically measured for commercial type Ib single crystal diamonds.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2021

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0033741