Dislocation Glide Induced Plasticity of 6H SiC Single Crystals

Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings...

Structures of 6H-SiC Surfaces

We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...

Electron-irradiation-induced deep levels in n-type 6H–SiC

Aluminum-implantation-induced deep levels in n-type 6H–SiC

Effect of Impurities on the Raman Scattering of 6H-SiC Crystals

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Aland B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be ind...