Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
نویسندگان
چکیده
منابع مشابه
Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full...
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Electron cyclotron resonance (ECR) discharges of HBr/Ar, HBr/H2, or HBr/CH4 were used for dry etching of Ga-based (GaAs, GaSb, and A1GaAs) and In-based (InP, InAs, InSb, InGaAs, and InA1As) III-V semiconductors. The effects of variations in pressure (1-20 mTorr), gas composition, and additional RF-induced bias on the sample were examined. At least -100 V of dc bias is required to initiate etchi...
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In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...
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We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree o...
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Ultrafast Magneto-Optical Spectroscopy of (III,Mn)V Ferromagnetic Semiconductors
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ژورنال
عنوان ژورنال: IEICE Transactions on Electronics
سال: 2017
ISSN: 0916-8524,1745-1353
DOI: 10.1587/transele.e100.c.150