Dynamic-State Analysis of Inverter Based on Cascode GaN HEMTs for PV Application

application of upfc based on svpwm for power quality improvement

در سالهای اخیر،اختلالات کیفیت توان مهمترین موضوع می باشد که محققان زیادی را برای پیدا کردن راه حلی برای حل آن علاقه مند ساخته است.امروزه کیفیت توان در سیستم قدرت برای مراکز صنعتی،تجاری وکاربردهای بیمارستانی مسئله مهمی می باشد.مشکل ولتاژمثل شرایط افت ولتاژواضافه جریان ناشی از اتصال کوتاه مدار یا وقوع خطا در سیستم بیشتر مورد توجه می باشد. برای مطالعه افت ولتاژ واضافه جریان،محققان زیادی کار کرده ...

Thermal Behavior Investigation of Cascode GaN HEMTs

This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management is extremely important for high power packaging, a hybrid integration of the GaN HEMTs onto a DBC substrate and metal case is proposed. We investi...

atedA GaN/GaN HEMTs

Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.

Hydrodynamic Models for GaN-Based HEMTs

For the development of next-generation GaN-based high electron mobility transistors, reliable software tools for DC and AC simulation are required. A hydrodynamic approach must be used, as the drift diffusion models fail to deliver accurate results for such structures. We propose two different hydrodynamic mobility models which account for the peculiarities of the GaN material system. The model...

Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs