Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers
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چکیده
منابع مشابه
Pulsed laser ablation and micromachining of 4H and 6H SiC wafers for high-temperature MEMS sensors
A review of various laser techniques for microscale processing of SiC for microelectronics and MEMS applications is presented. SiC is an excellent material for harsh environments due to its outstanding mechanical, thermal, and chemical properties. However, its extreme stability and inert properties created difficulties in conventional microfabrication methods to fabricate devices and has offere...
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ژورنال
عنوان ژورنال: Journal of Electronic Materials
سال: 2016
ISSN: 0361-5235,1543-186X
DOI: 10.1007/s11664-016-4378-8