Effect of grain boundary migration on apparent boundary diffusion coefficients

On Diffusion-Induced Grain-Boundary Motion

We consider a sharp interface model which describes diffusioninduced grain-boundary motion in a poly-crystalline material. This model leads to a fully nonlinear coupled system of partial differential equations. We show existence and uniqueness of smooth solutions.

Effect of Grain-Boundary Phase

Two types of hot-pressed silicon nitride, one having an amorphous grain-boundary phase (6 wt% yttria, 3 wt% alumina) and the other having a predominantly crystalline grain-boundary phase (8 wt% yttria, 1 wt% alumina), were tested on a split Hopkinson pressure bar with a momentum trap, such that, in each test, the sample was subjected to a single predefined stress pulse and then recovered withou...

Vacancy Generation During Grain Boundary Migration

We present a molecular dynamics simulation study of vacancy generation and emission from grain boundaries during curvature-driven grain boundary migration. The U-shaped half-loop bicrystal geometry is employed in order to maintain a constant driving force during boundary migration. Nonlinearities in plots of half-loop grain area versus time indicate the onset of non-steady-state behavior and va...

Grain Boundary Diffusion and Fractal Interface Concept

GRAIN BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SiO2

The enhanced grain boundary diffusion in cw laser processed LPCVD polycrystalline silicon films on insulating SiC>2 has been investigated and the grain boundary diffusion coefficient D' for Phosphorus has been determined. Mesa diodes were fabricated in the large grain poly-Si films by standard photolithographic and etching methods and subsequent ion implantation. The electron beam induced curre...