Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor
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چکیده
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the effect of explicit instruction of metacognitive strategies on reading comprehension among iranian high school students
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Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.
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ژورنال
عنوان ژورنال: Acta Physica Sinica
سال: 2019
ISSN: 1000-3290
DOI: 10.7498/aps.68.20191153