Effects of energy band structure on gallium arsenide based MOSFET

Gallium Arsenide - Based Readout Electronics

The readout of detector arrays requires the monolithic or hybrid integration of a integrate circuit multiplexer with the detector array. In most LWIR and VLWIR applications, a hybrid approach is used. For example, the detector array may be built from HgCdTe and the readout integrated circuit may be silicon CMOS [1]. The two integrated circuits are mated through a bump-bonding process in which e...

Gallium Arsenide Based Microsensor Systems

Gallium Arsenide (GaAs) based microsensors, analog readout electronics, analog to digital converters and digital signal processors have been in development. Microsensors include accelerometers, infrared sensors, and micromachines with high speed sensing response, extreme temperature operation, and high radiation hardness.

Energy band engineering of flexible gallium arsenide through substrate cracking with pretensioned films

Temperature effects on gallium arsenide Ni betavoltaic cell

A GaAs Ni radioisotope betavoltaic cell is reported over the temperature range 70 °C to −20 °C. The temperature effects on the key cell parameters were investigated. The saturation current decreased with decreased temperature; whilst the open circuit voltage, the short circuit current, the maximum power and the internal conversion efficiency values decreased with increased temperature. A maximu...

Temperature effects on gallium arsenide 63Ni betavoltaic cell.

A GaAs 63Ni radioisotope betavoltaic cell is reported over the temperature range 70°C to -20°C. The temperature effects on the key cell parameters were investigated. The saturation current decreased with decreased temperature; whilst the open circuit voltage, the short circuit current, the maximum power and the internal conversion efficiency values decreased with increased temperature. A maximu...