Effects of Thermal Annealing on La2O3 Gate Dielectric of InGaZnO Thin-Film Transistor
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منابع مشابه
A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases
The effects of dielectric-annealing gas (O2, N2 and NH3) on the electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric are studied in-depth, and improvements in device performance by the dielectric annealing are observed for each gas. Among the samples, the N2-annealed sample has a high saturation carrier mobility of 35.1 cm 2 /V∙s, the lowest subthresho...
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ژورنال
عنوان ژورنال: ECS Solid State Letters
سال: 2015
ISSN: 2162-8742,2162-8750
DOI: 10.1149/2.0011509ssl