Electron captureβdecay ofBe7encapsulated inC60: Origin of increased electron density at theBe7nucleus
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چکیده
منابع مشابه
Electron-electron interaction and tunnel density of states at the Fermi level in high-density two- dimensional electron system
The zero bias anomaly (ZBA) of the tunnel conductivity are investigated in the Al/δ−GaAs tunnel structure with 2D electron concentration in δ-layer to be equal to 3.6∗10 cm−2. We find that the dip (ZBA) in the tunnel density of states near the Fermi level EF reveals logarithmic dependence on the energy ε in the range kT < ε< h̄/τ . Here ε is the energy relative to EF and τ is the elastic relaxat...
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In 1878, Ernst Abbe (1) proved that the resolution of the optical microscope is limited by the wavelength of light. This meant that even when immersion optics and ultraviolet light are used, the smallest detail that can ever be resolved optically is of the order of 100 millimicrons, or 10 angstroms. No means were conceived of resolving finer detail until two discoveries were made: (i) the wave ...
متن کاملFirst-Principles Investigation of Density of States and Electron Density in Wurtzite In0.5Ga0.5 N Alloys with GGA-PBEsol Method
In present work, we have calculated the electronic properties including density of states and electron density for GaN, InN and InxGa1-xN in wurtzite phase for x=0.5. The study is based on density functional theory with full potential linearized augmented plane wave method by generalized gradient approximation for calculating electronic properties. In this report we concluded that InxGa1-xN ba...
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ژورنال
عنوان ژورنال: Physical Review C
سال: 2010
ISSN: 0556-2813,1089-490X
DOI: 10.1103/physrevc.81.024610