Electron field emission from ion‐implanted diamond
نویسندگان
چکیده
منابع مشابه
Secondary-electron emission from hydrogen- terminated diamond
Diamond amplifiers demonstrably are an electron source with the potential to support high-brightness, highaverage-current emission into a vacuum. We recently developed a reliable hydrogenation procedure for the diamond amplifier. The systematic study of hydrogenation resulted in the reproducible fabrication of high gain diamond amplifier. Furthermore, we measured the emission probability of dia...
متن کاملHigh-temperature electron emission from diamond films
This work examines electron field-emission characteristics of polycrystalline diamond films at elevated temperatures. Diamond is an excellent material as a field emitter because of its exceptional mechanical hardness and chemical inertness. The motivation behind this study involves the use of field emitters in applications where high temperatures exist. Nitrogen-doped polycrystalline diamond fi...
متن کاملDiamond vacuum field emission devices
This article reports the development of (a) vertical and (b) lateral diamond vacuum field emission devices with excellent field emission characteristics. These diamond field emission devices, diode and triode, were fabricated using a self-aligning gate formation technique from silicon-on-insulator wafers using conventional siliconmicropatterning and etching techniques. High emission current N0....
متن کاملModeling of the electron field emission process in polycrystalline diamond and diamond-like carbon thin films
Electron field emission has been observed from carbon thin films at relatively low electric fields. These films range from amorphous carbon to polycrystalline diamond films. There are many models that attempt to account for the electron field emission process observed in these films. The initial models that were based on the emission due purely to a negative electron affinity have now been modi...
متن کاملImaging electron emission from diamond and III–V nitride surfaces with photo-electron emission microscopy
Ž . Wide bandgap semiconductors such as diamond and the III–V nitrides GaN, AlN, and AlGaN alloys exhibit small or even negative electron affinities. Results have shown that different surface treatments will modify the electron affinity of Ž . diamond to cause a positive or negative electron affinity NEA . This study describes the characterization of these surfaces Ž . with photo-electron emiss...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1995
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.114993