Electron–hole superfluidity in strained Si/Ge type II heterojunctions

4.5 SiGe heterojunctions and band offsets

When two semiconductors are joined at a heterojunction, discontinuities occur in the valence bands and in the conduction bands. For an atomically abrupt interface, these discontinuities are sharp on an atomic length scale (i.e. on the order of a few atomic distances). This is in contrast with band-bending effects, which are associated with depletion layers, and which occur on much larger length...

High Mobility Strained Si/SiGe Heterostructure MOSFETs

Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...

Transport in Thin-Body MOSFETs Fabricated in Strained Si and Strained Si/SiGe Heterostructures on Insulator

The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device architectures, such as ultra-thin body or multiple-gate structures, offers the promise of maximizing current drive while maintaining the electrostatic control required for aggressive device scaling in future CMOS technology nodes. Two structures that combine strain engineering an...

Boron Diffusion in Strained and Strain-Relaxed SiGe

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained- Ge type-II heterostructures on relaxed SiGe substrates

Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantummechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/str...