Electronic band structure of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ti</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> thin films studied by angle-resolved photoemission spectroscopy
نویسندگان
چکیده
Ti2O3 exhibits a unique metal-insulator transition (MIT) at approximately 450 K over wide temperature range of ~ 150 K. This broad MIT accompanied by lattice deformation differs from the sharp MITs observed in most other transition-metal oxides. A long-standing issue is determining role electron-electron correlation electronic structure and Ti2O3. However, lack information about band has hindered investigating origin its unusual physical properties. Here, we report insulating films with slight hole doping angle-resolved photoemission spectroscopy (ARPES). ARPES showed clear dispersion on surface single-crystalline epitaxial films. The experimentally obtained structures were compared band-structure calculation results based density functional theory (DFT) generalized gradient approximation + U correction. are good agreement DFT calculations = 2.2 eV, suggesting that plays an important Furthermore, detailed analyses varying suggest characteristic semimetal-semimetal or semimetal-semiconductor caused changes Fermi due to deformation.
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ژورنال
عنوان ژورنال: Physical review
سال: 2022
ISSN: ['0556-2813', '1538-4497', '1089-490X']
DOI: https://doi.org/10.1103/physrevb.105.235137