Electronic friction and tuning on atomically thin MoS2

Abstract Friction is an energy dissipation process. However, the electronic contribution to channels remains elusive during sliding friction The and on atomically thin MoS 2 with semiconductive characteristics are studied tuned by gate-modulated carrier concentration. of was confirmed regulated through tuning strength electron-phonon coupling. coupling can be strengthened depressed increase decrease gate-modulation fitting concentration approximately linear which in accordance Langevin equation induced friction. Then active, dynamical, repeated properties achieved active modulation gate voltage. These observations help us understand essence, provide a utility approach tune intelligently two-dimensional materials achieve superlubric for application various micro-and nanoelectromechanical systems.