ELECTRONIC PARAMETER AND SUBBAND STRUCTURE VARIATIONS DUE TO AN EMBEDDED AlN POTENTIAL BARRIER LAYER IN Al0.3Ga0.7N/GaN HETEROSTRUCTURES
نویسندگان
چکیده
منابع مشابه
Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures
Inversion and depletion regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets up a barrier that may seriously impede perpendicular electronic transport. This may ruin the performance of devices such as quantum-cascade lasers and resonan...
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ژورنال
عنوان ژورنال: Surface Review and Letters
سال: 2007
ISSN: 0218-625X,1793-6667
DOI: 10.1142/s0218625x07010305