Electrothermal modeling of IGBTs: application to short-circuit conditions

Application Characterization of IGBTs

Page I. Gate Drive Requirements ................................................................................1 I. A Impact of the impedance of the gate drive circuit on switching losses............1 I. B Impact of the gate drive impedance on noise sensitivity.................................2 I. C Impact of gate drive impedance on "dynamic latching" ..................................2 I. D U...

Cryogenic Study and Modeling of Igbts

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -260 to 25 °C. A physics-based model previously developed is modified to incorporate appropriate physical behavior at low junction temperatures. Results from the model are compared to experimental waveforms and discrepancies are discussed. 1

circuit modeling of quantum well heterostructure biopolar phototransistor مدل سازی مداری qw-hbpt

چکیده ندارد.

A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design

Short-circuit boundary conditions in ferroelectric PbTiO3 thin films

We examine the application of short-circuit electrical boundary conditions in density-functional theory calculations of ferroelectric thin films. Modeling PbTiO3 films with metallic electrodes, we demonstrate that under periodic boundary conditions of supercells, short-circuit conditions for the electrodes are equivalently satisfied in two repeated slab geometries: a PbTiO3/metal superlattice g...