Enhanced Synaptic Features of ZnO/TaO<sub>x</sub> Bilayer Invisible Memristor for Brain-Inspired Computing
نویسندگان
چکیده
In this letter, we present a transparent bilayer ZnO/TaOx memristive synapse for brain-inspired computing. The device shows excellent AC endurance ( $10^{{9}}$ cycles) and high-temperature retention notation="LaTeX">$10^{{4}}$ s) without any degradation at 100 °C. exhibits highly stable repetitive 5130 potentiation (P) depression (D) epochs with 1.026 M pulses. multilevel characteristics (MLC) of the are achieved by changing pulse height from 0.7 to 1.1 V long-term (LTP) −0.9 −1.3 (LTD) having gradual conductance change both P D cases. synaptic features such as paired-pulse facilitation (PPF) spike time-dependent plasticity (STDP) measured using consecutive These unique confirm that has capability application in computing systems.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2022
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2022.3217983