Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices

Effects of epitaxial strain and ordering direction on the electronic properties of GaSb/InSb and InAs/InSb superlattices.

The structural and electronic properties in common-anion (GaSb) 1 /(InSb) 1 and common-cation (InAs) 1 /(InSb) 1 [111] ordered super-lattices have been determined using the local density total energy full potential linearized augmented plane wave method. The influence of the ordering direction, strain conditions and atomic substitution on the electronic properties of technological and experimen...

Dynamical mean-field theory of nickelate superlattices.

Dynamical mean-field methods are used to calculate the phase diagram, many-body density of states, relative orbital occupancy, and Fermi-surface shape for a realistic model of LaNiO(3)-based superlattices. The model is derived from density-functional band calculations and includes oxygen orbitals. The combination of the on-site Hunds interaction and charge transfer between the transition metal ...

Influence of strain on the electronic structure of the TbMnO3/SrTiO3 epitaxial interface

Electronic phase diagram of single-element silicon "strain" superlattices.

The evidence that the band gap of Si changes significantly with strain suggests that by alternating regions of strained and unstrained Si one creates a single-element electronic heterojunction superlattice (SL), with the carrier confinement defined by strain rather than by the chemical differences in conventional compositional SLs. Using first-principles calculations, we map out the electronic ...

investigation of the electronic properties of carbon and iii-v nanotubes

boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...