Epitaxial synthesis of single-domain gallium phosphide on silicon
نویسندگان
چکیده
منابع مشابه
Laser thermal annealing effects on single crystal gallium phosphide
We have studied the laser thermal annealing LTA effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction GIRXD , and transmission electron microscopy TEM measurements. After LTA process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of GaP. This result suggests ...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2020
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1697/1/012127