Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors
نویسندگان
چکیده
منابع مشابه
Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
Linearity characteristics of hetero-gatedielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (gm) and current drivability than SiO2-only...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2017
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4996109