Finite-element simulation of interfacial resistive switching by Schottky barrier height modulation

This study demonstrates a numerical model for interfacial switching memristors based on the Schottky barrier height modulation mechanism. A resistive contact is formed an n-type semiconductor and high work-function metal (e.g., strontium titanate platinum). The resistance determined by height, which influenced concentration of oxygen vacancies serving as space charges. Accordingly, spatial distribution cell conductance can be controlled applying bias voltage. advantageous over filamentary switching, owing to change being more gradual in switching. In this study, two-step analysis was performed memristor having metal–oxide–metal structure Pt/SrTiO3/Nb-SrTiO3, where Pt SrTiO3 form contact. first step, applied voltage obtained solving drift diffusion equations vacancies. second after setting according vacancy near contact, calculating current value small read Consequently, our simulation successfully reproduced experimental results SrTiO3-based memristor. Through device established, it utilized computational design various architectures.