Four-point probe electrical measurements on p-n-p InP structures

طراحی و ساخت دستگاه four-point probe station

یکی از ویژگی های اساسی مواد هادی مقاومت الکتریکی آن هاست که با داشتن تعداد الکترونهای آزاد لایه ظرفیت می توان مقاومت الکتریکی آن ماده را پیدا نمود. با اندازه گیری مقاومت الکتریکی مواد می توان ویژگیها و مشخصات ماده را تعیین نمود. در این پایان نامه بنا داریم به اندازه گیری مقاومت الکتریکی با استفاده چهار پراب همراستا با فاصله ثابت از هم که در تماس با سطح یک ویفر سیلیکونی هستند اقدام کنیم. در عم...

Electro-optical characterisation of InP nanowire based p-n, p-i-n Infrared photodetectors

High speed photodetectors are most sophisticated optoelectronic devices, because it has high photo sensitivity, low noise, high conversion efficiency and allow a large wavelength range of detection from 750 nm to 1.3–1.55 μm in the optical communication system. These photodetector is used as an optical receiver which transforms the energy of optical radiation such as infrared, visible or ultrav...

Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation

Sulfide-passivated GaAs and InP wafers were directly bonded to explore the efficiency of sulfide passivation on the bonded interfacial properties. We find that the bonded GaAs/InP interfaces after sulfide passivation contain sulfur atoms and a decreased amount of oxide species relative to the pairs bonded after conventional acid treatment; however, the residual sulfur atoms have no effect on th...

Electrical isolation of n -type and p -type InP layers by proton bombardment

GaAs, InP, InGaAs, GaInP, p+-i-n+ Multiplication Measurements For Modeling of Semiconductor as Photo Detectors

Optoelectronic is one of the thrust areas for the recent research activity. One of the key components of the optoelectronic family is photo detector to be widely used in broadband communication, optical computing, optical transformer, optical control etc. Present paper includes the investigation. carried on the basis of the. Multiplication measurements on GaAs, InP, InGaAs, GaInP, p+-i-n+s with...