Гетероструктуры Ga-=SUB=-x-=/SUB=-In-=SUB=-1-x-=/SUB=-As-=SUB=-y-=/SUB=-Bi-=SUB=-z-=/SUB=-Sb-=SUB=-1-y-z-=/SUB=-/InSb для фотоприемных устройств (λ = 6-12 μm)

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A non-vacuum process for preparing nanocrystalline CuIn<sub>1−x</sub>Ga<sub>x</sub>Se<sub>2</sub> materials involving an open-air solvothermal reaction

A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn1−xGaxSe2 (x = 0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diam...

متن کامل

Ambipolar field effect in the ternary topological insulator (Bi<sub><i>x</i></sub>Sb<sub>1-<i>x</i></sub>)<sub>2</sub>Te<sub>3</sub> by composition tuning

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties1–9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping10–12, and these mask the contribution...

متن کامل

Exotic Topological Insulator States and Topological Phase Transitions in Sb<sub>2</sub>Se<sub>3</sub>Bi<sub>2</sub>Se<sub>3</sub> Heterostructures

C 2012 American Chemical Society Exotic Topological Insulator States and Topological Phase Transitions in Sb2Se3 Bi2Se3 Heterostructures Qianfan Zhang, Zhiyong Zhang, Zhiyong Zhu, Udo Schwingenschlögl, and Yi Cui* Department of Material Sciences and Engineering and Stanford Nanofabrication Facility, Stanford University, Stanford, California 94305, United States, PSE Division, KAUST, Thuwal 2395...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Письма в журнал технической физики

سال: 2019

ISSN: 0320-0116

DOI: 10.21883/pjtf.2019.16.48152.17863