Gallium/aluminum interdiffusion between n-GaN and sapphire
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چکیده
منابع مشابه
The influence of interdiffusion on strain energy in the GaN-sapphire system
The impact of interdiffusion on strain energy in the GaN-sapphire system was studied. Gallium nitride epitaxial layers were grown on (0001) Al2O3 by low-pressure MOCVD at 850 °C, V/III ratio = 3600, P= 100 Torr using TEGa and NH3 sources in a N2 carrier. The ~0.3 μm thick films were then annealed at growth temperature in N2 for a period of 30 to 120 min. The Al and Ga diffusion coefficients at ...
متن کاملDislocations at the interface between sapphire and GaN
GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not be resolved in the topographs due to their high density, but a smaller density of about 105 cm-2 misfit dislocations were seen in the interface between GaN and sapphire by using large-area backreflection topography. The misfit dislocation...
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A wet etch process that produces smooth sidewalls aligned with the m-plane ({1!100}) crystal facets of Ga-polar GaN grown on sapphire is demonstrated by combining photo-electrochemical (PEC) treatment with a postprocessing wet etch step. This novel process results in faceted and extremely smooth vertical etched sidewalls. This two-step process consists of a PEC treatment to define the geometry ...
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We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire~0001! by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga~C2H5!3 exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx 1 ions and Ga~C2H5!3 exhibited layer-by-layer intensity oscillations with maxim...
متن کاملMetastable Giant Moments in Gd-Implanted GaN, Si, and Sapphire
We report on Gd ion implantation and magnetic characterization of GaN films on sapphire substrates and of bare sapphire and Si substrates to shed light on the mechanism underlying the induced magnetism upon Gd ion implantation. For all three hosts, giant magnetic moments per Gd ion were observed at temperatures of 5 through 300 K. The maximum moment per Gd in GaN was 1800μB , while the moments ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1998
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.368362