GaN High Electron Mobility Transistor Degradation: Effect of RF Stress

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been stepstressed under both onand off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submicron HEMTs as compared to the excellent stability of the TLM patterns under the same stress conditions r...

MOCVD growth of GaN-based high electron mobility transistor structures

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

We have investigated the RF power degradation of GaN high electron mobility transistors (HEMTs) with different gate placement in the source–drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsibl...

Impact of Gate Placement on RF Degradation in GaN High Electron Mobility Transistors

We have investigated RF degradation in GaN high electron mobility transistors (HEMTs) with different gate placement in the source-drain gap. We found that devices with a centered gate show different degradation behavior from those with the gate placed closer to the source. In particular, centered gate devices degraded through a mechanism that has a similar signature as that responsible for high...

Degradation of GaN High Electron Mobility Transistors under High - power and High - temperature Stress

GaN HEMTs (High Electron Mobility Transistors) are promising candidates for high power and high frequency applications but their reliability needs to be established before their wide deployment can be realized. In this thesis, degradation mechanisms of GaN HEMTs under high-power and high-temperature stress have been studied. A novel technique to extract activation energy of degradation rate fro...