Gate-controlled quantum dots in monolayer WSe₂

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical quantum technologies. The interplay between electron spin valley, as well the possibility to address their states electrically optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform development devices. In this work, we fabricate based on heterostructures layered 2D materials, in which realize gate-controlled tungsten diselenide (WSe2) hole dots. We discuss observed mesoscopic transport features related emergence dots WSe2 device channel, compare them a theoretical model.