Gate Drive Circuit Implementation for Parallel Connection of Power Devices Considering Parasitic Inductance
نویسندگان
چکیده
SiC devices are potential future power because of their higher switching speed and lower ON resistance than those Si devices. Research development efforts to apply them in medium- large-capacity conversion circuits underway. However, TO packages, which general-purpose difficult high-current applications owing low current ratings. Therefore, increasing the capacity by connecting parallel is being studied. imbalance during due differences device characteristics variations parasitic inductance problem. This study proposed a current-balancing procedure focused on inductances around gate drive circuit implementation. The method was verified conducting double-pulse tests at 300V 200A.
منابع مشابه
Switching IGBTs in parallel connection or with enlarged commutation inductance
Acknowledgements The results presented in this thesis were obtained during my employment as a scientific coworker at the The colleagues at EELE for the good working atmosphere. The students who supported me with their projects.
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ژورنال
عنوان ژورنال: IEEJ journal of industry applications
سال: 2023
ISSN: ['2187-1094', '2187-1108']
DOI: https://doi.org/10.1541/ieejjia.22006323