High electric field transport effects on low temperature operation of pseudomorphic HEMTs
نویسندگان
چکیده
منابع مشابه
High electric field transport effects on low temperature operation of pseudomorphic HEMTs
High electric field effect in very small pseudomorphic High Electron Mobility Transistor (HEMT) A10.22Gao.78AslIn0.2Gag.gAs/GaAs and their influence at low temperature are investigated for O.1pm up to 0 . 4 ~ gate lengths. The extent of transport improvement at low temperature and performance degradation associated with gate length reduction are underlined. Limitations in performance improvemen...
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ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1994
ISSN: 1155-4339
DOI: 10.1051/jp4:1994627