High-Performance Bidirectional Chemical Sensor Platform Using Double-Gate Ion-Sensitive Field-Effect Transistor with Microwave-Assisted Ni-Silicide Schottky-Barrier Source/Drain

This study proposes a bidirectional chemical sensor platform using ambipolar double-gate ion-sensitive field-effect transistors (ISFET) with microwave-assisted Ni-silicide Schottky-barrier (SB) source and drain (S/D) on fully depleted silicon-on-insulator (FDSOI) substrate. The SB S/D offer turn-on characteristics for both p- n-type channel operations. operations are characterized by high noise resistance as well improved mobility excellent drift performance, respectively. These features enable sensing regardless of the gate voltage polarity, thus contributing to use detection channels based various target substances, such cells, antigen-antibodies, DNA, RNA. Additionally, capacitive coupling effect existing between top bottom gates help achieve self-amplified pH sensitivity exceeding Nernst limit 59.14 mV/pH without any additional amplification circuitry. FET performance was evaluated electrical characteristics, in single-gate modes, reliability continuous repetitive Considering confirmed through evaluation, proposed is expected be applicable fields including biosensors. And linkage subsequent studies, medical applications precision detector specific markers will possible.