Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
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چکیده
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2017
ISSN: 2045-2322
DOI: 10.1038/s41598-017-01080-0