Hot-carrier dynamics in InAs/AlAsSb multiple-quantum wells

Abstract A type-II InAs/AlAs $$_{0.16}$$ 0.16 Sb $$_{0.84}$$ 0.84 multiple-quantum well sample is investigated for the photoexcited carrier dynamics as a function of excitation photon energy and lattice temperature. Time-resolved measurements are performed using near-infrared pump pulse, with energies near to above band gap, probed terahertz probe pulse. The transient absorption characterized by multi-rise, multi-decay that captures long-lived decay times metastable state an excess-photon $$>100$$ > 100 meV. For sufficient energy, followed transition states. Excitation dependence states map onto nearly-direct gap ( $$E{_g}$$ E g ) density Urbach tail below . As temperature increases, increase $$<E{_g}$$ < , due increased phonon interaction unintentional defect states, stabilization hot carriers $$>E{_g}$$ Additionally, Auger (and/or trap-assisted Auger) scattering onset plateau may also contribute longer hot-carrier lifetimes. Meanwhile, initial component shows strong on temperature, reflecting complicated transfer between valence-band indicating methods further prolong technological applications.