Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

We evaluate the terahertz (THz) detectors based on field-effect transistor (FET) with graphene channel (GC) and a floating metal gate (MG) separated from GC by black-phosphorus (b-P) or black-arsenic (b-As) barrier layer. The operation of these GC-FETs is associated heating two-dimensional electron gas in impinging THz radiation leading to thermionic emission hot electrons MG. This results variation potential, which affects source–drain current. At frequencies close plasmonic resonance gated GC, current and, hence, detector responsivity can be resonantly large.