Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP

Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP.

Rights: © 1995 American Physical Society (APS). This is the accepted version of the following article: Alatalo, M. & Kauppinen, H. & Saarinen, K. & Puska, M. J. & Mäkinen, J. & Hautojärvi, P. & Nieminen, Risto M. 1995. Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP. Physical Review B. Volume 51, Issue 7. 4176-4185. ISSN 1550-235X (...

Positron annihilation studies on vacancy defects in group IV semiconductors

Electrical properties of semiconductor materials are greatly influenced by point defects such as vacancies and interstitials. These defects are common and form during the growth and processing of the material. Positron annihilation spectroscopy is a method suitable for detecting and studying vacancy-type lattice defects. In this work, the formation, properties, and annealing of vacancy defects ...

Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN

Rights: © 2011 American Physical Society (APS). This is the accepted version of the following article: Rauch, Christian & Makkonen, Ilja & Tuomisto, Filip. 2011. Identifying vacancy complexes in compound semiconductors with positron annihilation spectroscopy: A case study of InN. Physical Review B. Volume 84, Issue 12. 125201/1-9. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.125201, which...

Positron-annihilation study of compensation defects in InP

Positron Annihilation at Dislocations and Related Point Defects in Semiconductors

Dislocations act in semiconductors as combined positron traps, consisting of a shallow precursor state, which is related to regular parts of the dislocation line, and bound vacancy-like defects. The motion of dislocations during plastic deformation generates a high number of point defects. The clustering of vacancies to stable voids is regarded as a primary process of the jog dragging mechanism...