Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)
نویسندگان
چکیده
منابع مشابه
Fabrication of p-Type Nano-porous Silicon Prepared by Electrochemical Etching Technique in HF-Ethanol and HF-Ethanol-H2O Solutions
Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...
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Porous layers were produced on a p-type (100) Si wafer by electrochemical anodic etching. The morphological, nanostructural and optical features of the porous Si were investigated as functions of the etching conditions. As the wafer resistivity was increased from 0.005 to 15 Ω·cm, the etched region exhibited 'sponge', 'mountain' and 'column'-type morphologies. Among them, the sponge-type struct...
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Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...
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ژورنال
عنوان ژورنال: International Letters of Chemistry, Physics and Astronomy
سال: 2017
ISSN: 2299-3843
DOI: 10.18052/www.scipress.com/ilcpa.72.28