Improving metal/semiconductor conductivity using AlOx interlayers on n-type and p-type Si
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چکیده
منابع مشابه
Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate
Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle o...
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SiGe is a good thermoelectric material for high temperature applications. In this paper the fabrication and characterization of single-element SiGe/Si superlattice coolers of both nand p-type devices are described for room temperature applications. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity between the hot and the cold junctions, and...
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An extremely sharp and well-defined sheet of Sb-dopant atoms can be embedded in Si with high p-type background during MBE growth. We have measured the transport parallel and perpendicular to the doping layer. The electronic 1 eve1 s of 2-dimensional subbands have been detected.
متن کاملthe investigation of the relationship between type a and type b personalities and quality of translation
چکیده ندارد.
Electrical conductivity of p-type BiOCl nanosheets.
High quality BiOCl nanosheets were fabricated using facile, room temperature hydrolysis of Bi(NO3)3 and HCl. The resulting nanosheets had dimensions of 500 nm with the exposed {001} facet. The band gap of the nanosheets was found to be 3.34 eV with conduction and valence band edges at -3.63 eV and -6.97 eV with respect to vacuum, respectively. The electrical conductivity of drop-cast BiOCl nano...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2014
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4892003