In-cascade ionization effects on defect production in 3C silicon carbide
نویسندگان
چکیده
منابع مشابه
Photonic crystal cavities in cubic (3C) polytype silicon carbide films.
We present the design, fabrication, and characterization of high quality factor (Q ~10(3)) and small mode volume (V ~0.75 (λ/n)(3)) planar photonic crystal cavities from cubic (3C) thin films (thickness ~200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1.25 - 1.6 μm. Finally, we ...
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ژورنال
عنوان ژورنال: Materials Research Letters
سال: 2017
ISSN: 2166-3831
DOI: 10.1080/21663831.2017.1334241