In depth analysis of transfer length method application on passivated contacts under illumination

Although solar cells operate under illumination, most electrical characterization methods are carried out in darkness, which implies some bias. In this work, we study the influence of light on contact resistivity electron and hole contacts a silicon heterojunction (SHJ) cell using transfer length method (TLM) order to determine them conditions representative an operating at maximum power point. A specific fabrication process has been developed preserve passivation level. Therefore, first focus patterning approach used for processing, show that can fabricate TLM samples with good properties. Using simulations, also discuss inhomogeneities excess minority carrier spatial concentration analysis. These inhomogeneities, due shading, local damages or drift bias voltage make measurement complicated carry without significant error. Our results suggest is more precise darkness very high injection levels, rear illumination low