In-situ crystallization of GeTe\GaSb phase change memory stacked films
نویسندگان
چکیده
منابع مشابه
Crystallization of Ge:Sb:Te Thin Films for Phase Change Memory Application
Chalcogenide glasses are a chemical compound consisting of at least one chalcogen element, sulphur, selenium, or tellurium, in combination with other elements. These glasses obtained great attention after discovery between 1962 and 1969 by Kolomiets, Eaton, Ovshinsky and Pearson of the S-shape current-voltage characteristic in chalcogenide glasses and the switching phenomenon from high to low r...
متن کاملEffect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory
The crystallization properties of phase-change memory (PCM) in the presence of thermal disturbances are investigated with a novel micro-thermal stage. It is found that the recrystallization time due to thermal disturbances significantly varies depending on how the PCM cell drifts. The longer crystallization time is obtained following additional resistance drift, which can be described by an inc...
متن کاملCurrent-driven crystallization promotion for multilevel storage in phase-change memory
In this study, we report current-driven crystallization promotion for multilevel storage in both lateral and vertical phase-change memories (PCMs). For the lateral device, the active medium consists of a top 50-nm TiN/150-nm SbTeN. It was demonstrated that the number of distinguishable resistance levels can readily reach 16 and even higher. For the vertical device, TiSi3/Ge2Sb2Te5/TiN structure...
متن کاملsynthesis of platinum nanostructures in two phase system
چکیده پلاتین، فلزی نجیب، پایدار و گران قیمت با خاصیت کاتالیزوری زیاد است که کاربرد های صنعتی فراوانی دارد. کمپلکس های پلاتین(ii) به عنوان دارو های ضد سرطان شناخته شدند و در شیمی درمانی بیماران سرطانی کاربرد دارند. خاصیت کاتالیزوری و عملکرد گزینشی پلاتین مستقیماً به اندازه و- شکل ماده ی پلاتینی بستگی دارد. بعضی از نانو ذرات فلزی در سطح مشترک مایع- مایع سنتز شده اند، اما نانو ساختار های پلاتین ب...
Crystallization kinetics of amorphous NiTi shape memory alloy thin films
The temperature dependence of the crystallite nucleation and growth rates is measured for amorphous NiTi thin films. Using transmission electron microscopy, crystallites are shown to nucleate homogeneously in the film and to grow in a channeling mode. A mechanism that suppresses heterogeneous nucleation is proposed. By manipulating nucleation and growth rates, grains as large as 60 lm can be ob...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2014
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4904741