In-situ Doping and Local Overcompensation of High Performance LPCVD Polysilicon Passivated Contacts as Approach to Industrial IBC Cells
نویسندگان
چکیده
منابع مشابه
Fracture Strain of Lpcvd Polysilicon
A new polysilicon bridge-slider structure (Fig. 1), in which one end of the bridge is fixed and the other is connected to a plate sliding in two flanged guideways, is designed and fabricated to study the strain at fracture of LPCVD polysilicon. In the experiments, a mechanical probe is used to push against the plate end, compressing and forcing the bridge to buckle until it breaks. The distance...
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ژورنال
عنوان ژورنال: Energy Procedia
سال: 2016
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2016.07.123