Influence of carrier-carrier and carrier-phonon correlations on optical absorption and gain in quantum-dot systems

Influence of carrier statistics on InGaN quantum dot device performance

In this work InGaN quantum dots (QDs) in GaN matrix formed during strain induced phase separation were investigated. We show that although electron – photon interaction rate in residual quantum well (QW) InGaN is high, carrier capture to QD levels and carrier escape from QD levels to the QW is slowed presumably due to large energy distance between the QD levels and between the QD levels and the...

Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems

A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and p...

Intraband carrier photoexcitation in quantum dot lasers.

We unveil the role of bound-to-continuum photoexcitation of carriers as a relevant process that affects the performance of quantum dot (QD) lasers. We present the response of an InAs/InGaAs QD laser to a sub-band gap pump, showing an unexpected depletion of the emitted photons. We relate this observation with carrier photoexcitation through additional transmission and photocurrent measurements....

Line broadening caused by Coulomb carrier-carrier correlations and dynamics of carrier capture and emission in quantum dots

Time-dependent analysis of carrier density and potential energy in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD)

Interaction and correlation effects in quantum dots play a fundamental role in defining both their equilibrium and transport properties. Numerical methods are commonly employed to study such systems. In this paper we investigate the numerical calculation of quantum transport of electrons in spherical centered defect InGaAs/AlGaAs quantum dot (SCDQD). The simulation is based on the imaginary time...