Influence of magnetron sputtering process parameters on low-temperature electrical transport characteristics of zirconium oxynitride thin films

نویسندگان

چکیده

Abstract In order to determine the influence of process parameters including nitrogen and oxygen flow rate on structure electrical transport characteristics zirconium oxynitride(ZrO x N y ) thin films, ZrO films were prepared sapphire substrates by RF reactive magnetron sputtering deposition technology. The crystal orientation morphology at different characterized XRD SEM, respectively. electric behavior 300K 3K was measured PPMS. results show that insulativity ZrN is enhanced with increase in atmosphere. With atmosphere, film enhanced.

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ژورنال

عنوان ژورنال: IOP conference series

سال: 2022

ISSN: ['1757-899X', '1757-8981']

DOI: https://doi.org/10.1088/1757-899x/1241/1/012052