Infrared Luminescence in Er and Er+O Implanted 6H SiC

Structures of 6H-SiC Surfaces

We have systematically studied reconstructions of the 6H SiC(0001) and (0007) surface under both Si rich and C rich condition using field ion-scanning tunneling microscopy (FI-STM). The sample was cleaned by in situ Si beam etching at 900-1000 'C. The Si rich and C rich phases were produced by annealing the sample in a Si flm and C2HZ, respectively. On the (0001) surface, the as-cleaned surface...

Self-organization in porous 6H–SiC

Self-organization in porous 6H–SiC" (2000). Faculty Publications from the Department of Electrical and Computer Engineering. 7.

Hexagonal boron nitride and 6H-SiC heterostructures

Shockley-Frank stacking faults in 6H-SiC

Shallow P donors in 3C-, 4H-, and 6H-SiC

EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-, 4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signals from the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon and carbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC which was also free f...