Исследование динамики включения низковольтных InP-гомотиристоров

A series of heterostructure designs low-voltage InP homothyristors have been investigated using numerical simulation methods. The design with a space charge layer formed in the p-base region n-p-n transistor part was considered as base one. dynamic characteristics and processes that determine rate transition to on state are investigated. It is shown thickness increases from 1 2.6 μm, maximum on-state currents increase 70 90 A, while minimum turn-on time 11 ns at blocking voltage 55 V. operation efficiency determined by residual voltage. Residual decreases decrease p-base.