InSb quantum-well structures for electronic device applications
نویسندگان
چکیده
منابع مشابه
Fabrication and Characterization of an InSb Quantum Well Device
This thesis is focused on fabrication and characterization of an InSb quantum well device. A Hall Bar device is manufactured and a Hall effect measurement is carried out. Values such as the electron density and the mobility are then extracted. The weak antilocalization peak is observed and the usual fitting model is shown not to apply to the data obtained. A rough estimation of spin-oribt energ...
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Spin-resolved cyclotron resonance is observed in InSb/AlInSb quantum-well heterostructures. Spin-resolved transitions are identified for fields greater than 2.2 T and confirmed by k ·p modeling. The cyclotron effective mass is calculated for a range of fields up to 11.5 T and is indicative of the strong nonparabolicity in this material. Resonant coupling is observed between the ground and first...
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The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with fT1⁄4 305 GHz at Vds1⁄4 0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 mm thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed, energy-efficient logic...
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A self-conststent quantum mechanical simulation is used to study the effects of doping, spacer layers, harrier height, harrier wdth and well doping on the bound state and bound state charge in a deep quantum well resonant tunneling structure. Experimental reaulta for the GaAs and InP heteroatructure material system are presented. Finally various device applications. such as microwaw video detec...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2009
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2008.11.081