Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells
نویسندگان
چکیده
منابع مشابه
Statistical analyses on Si microwire solar cells
In this data, the statistical analyses of silicon microwire (SiMW) solar cells are presented for the research article entitled "Electrical and optical properties of Si microwire solar cells" (H.-S. Kim, D. B. Patel, H. Kim, M. Patel, K. R. Chauhan, W. Park, and J. Kim) [1]. This article shows the statistical analyses on performances of the various SiMW solar cells. The accuracy of solar cell pa...
متن کاملEfficiency Enhancement of Si Solar Cells by Using Nanostructured Single and Double Layer Anti-Reflective Coatings
The effect of single and double-layer anti-reflective coatings on efficiency enhancement of silicon solar cells was investigated. The reflectance of different anti-reflection structures were calculated using the transfer matrix method and then to predict the performance of solar cells coated by these structures, the weighted average reflectance curves were used as an input of a PC1D simulation....
متن کاملFlexible micromorph tandem a-Si/ c-Si solar cells
The deposition of a stack of amorphous a-Si:H and microcrystalline c-Si:H tandem thin film silicon solar cells micromorph requires at least twice the time used for a single junction a-Si:H cell. However, micromorph devices have a higher potential efficiency, thanks to the broader absorption spectrum of c-Si:H material. High efficiencies can only be achieved by mitigating the nanocracks in the c...
متن کاملa-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells
The performance and material quality requirements of thin film a-Si/c-Si1-xGex/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si1-xGex thickness, Si1-xGex lifetime and a-Si/c-Si1-xGex interfacial quality have been studied. The simulations predict that Si1-xGex based thin film solar cells provide a significant increase in solar cell output c...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2011
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2011.2143716