Interface properties and refraction of light in twin-layered organic semiconductors
نویسندگان
چکیده
منابع مشابه
Interface Structure of MoO3 on Organic Semiconductors
We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO3 on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are used to measure the evolution of the physical, chemical and electronic structure of the interfaces...
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A series of layered molybdenum dichalcogenides, i.e., MoX₂ (X = S, Se and Te), were prepared in cyclohexyl pyrrolidinone by a liquid-phase exfoliation technique. The high quality of the two-dimensional nanostructures was verified by transmission electron microscopy and absorption spectroscopy. Open- and closed-aperture Z-scans were employed to study the nonlinear absorption and nonlinear refrac...
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The refraction phenomenon at the interface of an ordinary material and a lossy metamaterial has been investigated. For oblique incidence on the lossy metamaterial, the planes of constant amplitude of the refracted wave are parallel to the interface and the plane of constant phases make a real angle with the interface (real refraction angle). The real refraction angle and hence, the real refract...
متن کاملDispersion of nondegenerate nonlinear refraction in semiconductors.
We use our recently developed beam-deflection technique to measure the dispersion of the nondegenerate nonlinear refraction (NLR) of direct-gap semiconductors. The magnitude and sign of the NLR coefficient n2(ωa; ωb) are determined over a broad spectral range for different values of nondegeneracy. In the extremely nondegenerate case, n2(ωa; ωb) is positively enhanced near ...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2007
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/61/1/232