Intrinsic Mobility Limit for Anisotropic Electron Transport inAlq3

Intrinsic mobility limit for anisotropic electron transport in Alq3.

Muon spin relaxation has been used to probe the charge carrier motion in the molecular conductor Alq3 (tris[8-hydroxy-quinoline] aluminum). At 290 K, the magnetic field dependence of the muon spin relaxation corresponds to that expected for highly anisotropic intermolecular electron hopping. Intermolecular mobility in the fast hopping direction has been found to be 0.23+/-0.03 cm2 V-1 s(-1) in ...

Intrinsic electron mobility limits in b-Ga2O3

By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as the dominant mechanism limiting electron mobility in b–Ga2O3 to <200 cm/V s at 300 K for donor doping densities lower than !10 cm. Despite similar electron effective mass of b–Ga2O3 to GaN, the electron mobility is !10" lower because of a massive Fr€ohlich interactio...

Anisotropic magnetoresistance in single electron transport

We study the effect of magnetic anisotropy in a single electron transistor with ferromagnetic electrodes and a non-magnetic island. We identify the variation δµ of the chemical potential of the electrodes as a function of the magnetization orientation as a key quantity that permits to tune the electrical properties of the device. Different effects occur depending on the relative size of δµ and ...

Electron transport in nitrogen-polar high electron mobility transistors

Anisotropic Electron Transport in Lattice-Mismatch-Strained GalnAs Alloys

Besides Gaxin1_xAs with compositions nearly lattice-matched to GaAs and InP substrates both In-rich and highly strained alloys become increasingly important for heterojunction transistors and emitters also for room temperature applications. Based on deformation potential theory we first express the strain induced shifts of the conduction and valence band edges under biaxial stress. Using k·p th...