Intrinsic stacking domains in graphene on silicon carbide: A pathway for intercalation

Field effect in epitaxial graphene on a silicon carbide substrate

Field effect in epitaxial graphene on a silicon carbide substrate Gong Gu Sarnoff Corporation, CN5300, Princeton, New Jersey 08543 Shu Nie and R. M. Feenstra Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 R. P. Devaty and W. J. Choyke Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 152650 Winston K. Chan and Michael G. K...

Epitaxial graphene on silicon carbide: Introduction to structured graphene

We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remain...

Flower-Shaped Domains and Wrinkles in Trilayer Epitaxial Graphene on Silicon Carbide

Trilayer graphene is of particular interest to the 2D materials community because of its unique tunable electronic structure. However, to date, there is a lack of fundamental understanding of the properties of epitaxial trilayer graphene on silicon carbide. Here, following successful synthesis of large-area uniform trilayer graphene, atomic force microscopy (AFM) showed that the trilayer graphe...

Superconductivity in Ca-intercalated epitaxial graphene on silicon carbide

Graphene Formation on the Carbon face of Silicon Carbide

In this thesis, we study the structure of epitaxial graphene formed on polar faces of SiC the (0001) face, also known as the Si-face, and the (0001 ) face, known as the C-face. On both polar surfaces, graphene films are prepared in ultra-high vacuum (UHV), in environments either of argon or cryogenically purified neon, or in a low-pressure background of disilane. Characterization of graphene is...